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| DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2.8 0.2 2 x 3.3 0.3 6.35 0.4 1.53 0.3 1 FEATURES * High Linear Power and Gain * Low Internal Modulation Distortion * High Reliability Gold Metallization * Emitter Ballasting * 24 V Operation 3 2.17 0.3 0.1 +0.05 -0.02 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg R = 10 SPECIFIED CONDITION RATINGS 45 30 3 18 14 79.5 2.2 200 -65 to 150 UNIT V V V V A W C/W C C Document No. P11584EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 4.67 0.4 18.9 0.3 14.2 0.3 6.35 0.4 14.35 0.4 2 1996 NEL2035F03-24 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Collector to Emitter Cutoff Current Collector to Emitter Voltage (Base to Emitter Registor = 10 ) Collector to Emitter Voltage (Open Base) Collector to Base Voltage (Open Emitter) Emitter to Base Voltage (Open Collector) DC Forward Current Gain Output Capacitance SYMBOL ICES SPECIFIED CONDITION VCE = 24 V IC = 20 mA, R = 10 MIN. TYP. MAX. 10 UNIT mA VCER 30 85 V VCEO IC = 20 mA 18 22 V VCBO IC = 20 mA 45 85 V VEBO IC = 25 mA 3 5.3 V hFE Cob VCE = 5 V, IC = 1 A VCE = 24 V, f = 1 MHz 30 100 189 150 pF 2 NEL2035F03-24 PERFORMANCE SPECIFICATIONS (TA = 25 C) CLASS AB OPERATION PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 100 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pout = PIdB, Iq = 100 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pin = 2 W, Iq = 100 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, f = 100 kHz, 30 W PEP, VCC = 24 V, Iq = 100 mA, CLASS AB MIN. 30 TYP. 33 MAX. UNIT W Collector Efficiency c GL 40 50 % Linear Gain 9 dB 3rd Order Intermodulation IM3 -33 dBc CLASS A OPERATION PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 1.5 A, VCC = 16 V, CLASS A f = 1.97 GHz, Pout = PIdB, Iq = 1.5 A, VCC = 16 V, CLASS A f = 1.97 GHz, Pin = 0.1 W, Iq = 1.5 A, VCC = 16 V, CLASS A f = 1.97 GHz, f = 100 kHz, 5 W PEP, VCC = 16 V, Iq = 1.5 A, CLASS A MIN. TYP. 7 MAX. UNIT W Collector Efficiency c GL 30 % Linear Gain 10.7 dB 3rd Order Intermodulation IM3 -33 dBc 3 NEL2035F03-24 Gain (dB) 11 10 9 8 7 6 50 40 f = 1970 MHz Class AB, Vcc = 24 V Iq = 100 mA Class A, Vcc = 16 V Iq = 1.5 A c (%) 30 30 W 20 20 24 28 32 36 40 44 Pout (dBm) -25 f1 = 1970 MHz f2 = 1970.1 MHz Class AB, Vcc = 24 V Iq = 100 mA Class A, Vcc = 16 V Iq = 1.5 A -35 -30 IM3 IM5 -40 IM (dBc) -45 IM7 -50 -55 -60 22 26 30 34 Pout (dBm) *** PEP 38 42 46 4 NEL2035F03-24 S-PARAMETER NEL2035 Class A VCC = 16 V, Icq = 1.5 A FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.98 0.98 0.98 0.97 0.97 0.96 0.95 0.94 0.93 0.92 0.90 0.89 0.87 0.86 0.85 0.84 0.83 0.84 0.84 0.85 0.86 0.87 0.89 0.90 0.90 0.91 0.92 0.93 0.93 0.94 0.94 S11 ANG (DEG) 165 165 165 164 164 164 163 163 163 162 162 162 163 163 164 165 167 168 169 170 171 171 171 171 171 171 171 171 171 171 171 MAG 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.03 0.03 0.03 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 S12 ANG (DEG) 48 47 47 45 43 40 37 33 29 25 21 15 10 -1 -8 -14 -15 -20 -25 -28 -33 -36 -38 -34 -26 -21 -13 -1 16 30 38 S21 MAG 0.42 0.44 0.47 0.49 0.51 0.54 0.57 0.61 0.65 0.69 0.71 0.74 0.78 0.81 0.83 0.84 0.81 0.78 0.75 0.72 0.69 0.65 0.60 0.55 0.51 0.49 0.46 0.43 0.40 0.37 0.35 ANG (DEG) 73 71 68 65 62 59 57 53 48 43 37 32 26 19 11 3 -5 -11 -18 -24 -30 -36 -42 -46 -49 -51 -55 -58 -61 -63 -65 MAG 0.92 0.91 0.90 0.89 0.88 0.87 0.86 0.85 0.84 0.82 0.81 0.80 0.79 0.79 0.79 0.80 0.82 0.84 0.87 0.89 0.91 0.93 0.94 0.95 0.96 0.97 0.97 0.98 0.98 0.98 0.99 S22 ANG (DEG) 160 160 160 160 160 160 160 160 161 161 162 163 165 166 168 170 171 172 172 172 172 172 171 171 170 169 169 168 168 167 167 NEL2035 Class AB VCC = 24 V, Icq = 0.1 A FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.98 0.98 0.98 0.98 0.98 0.97 0.97 0.97 0.97 0.96 0.96 0.95 0.94 0.93 0.92 0.90 0.88 0.87 0.86 0.86 0.87 0.88 0.89 0.90 0.91 0.92 0.93 0.93 0.94 0.94 0.95 S11 ANG (DEG) 167 167 167 166 166 166 166 165 165 165 164 164 164 164 163 163 164 165 166 167 169 169 170 170 170 170 170 170 170 169 169 MAG 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.07 0.06 0.05 0.05 0.04 0.03 0.03 0.02 0.02 0.02 0.01 0.01 S12 ANG (DEG) 68 65 63 61 60 59 56 53 51 48 45 41 35 31 23 15 4 -7 -18 -29 -39 -48 -56 -62 -67 -71 -74 -77 -80 -84 -89 S21 MAG 0.20 0.22 0.23 0.25 0.26 0.28 0.30 0.33 0.36 0.38 0.42 0.45 0.51 0.56 0.62 0.67 0.71 0.73 0.74 0.72 0.68 0.63 0.57 0.51 0.46 0.42 0.39 0.35 0.32 0.30 0.27 ANG (DEG) 90 88 86 84 82 80 79 76 72 68 65 60 55 49 41 32 21 10 -1 -13 -23 -33 -42 -49 -54 -58 -63 -67 -70 -73 -76 MAG 0.95 0.95 0.94 0.93 0.92 0.92 0.90 0.89 0.87 0.85 0.82 0.78 0.74 0.68 0.62 0.55 0.49 0.47 0.49 0.56 0.64 0.72 0.78 0.83 0.86 0.89 0.91 0.92 0.93 0.94 0.95 S22 ANG (DEG) 156 155 155 154 154 153 152 151 150 149 147 146 145 144 145 148 155 165 56 -56 -173 -173 -174 -176 -58 60 178 177 175 174 173 5 NEL2035F03-24 NEL2035F03-24 Zin/Zout 0.9 1.0 1.2 0.8 1 .4 0.7 1.6 0.6 1. 0.5 8 2.0 0.6 0.7 0.8 0.9 1.0 0 0.2 0.5 POS ITIV ER EA C T + ANCE JX C Zo OM PO ER EAC T AN +JX CE C Zo OM PO 0.6 0.8 1.0 0 1. POS ITIV 1.8 0.1 2.0 0.2 0.3 4.0 0.4 5.0 0.5 10 0.6 20 0.7 50 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 0 1.4 1.6 3.0 0 0.1 0.4 0.1 0.6 NT NT 1. 0.2 0. 8 0.2 0 1.0 ON E P OM P OM O NE EC NC TA X C EA -J E R Zo TIV 0.3 0.3 EC NC TA X C EA -J E R Zo TIV 0.5 1.8 0.5 2.0 0.6 0.7 1.6 0.6 0.8 1.4 0.7 0.9 1.2 0.8 1.0 0.9 ZO = 50 ohm f [GHz] 1.80 1.90 1.97 2.00 Zin [ohm] 2.6 + j8.4 2.3 + j7.0 2.3 + j6.5 1.6 + j5.6 Zout [ohm] 4.6 + j5.8 2.0 + j5.2 2.3 + j6.0 1.3 + j6.2 Zin Zout 6 1.0 2 NE GA 0.4 0.2 NE GA 0. 4 0. 4 50 RESISTANCE COMPONENT R 0.2 Zo RESISTANCE COMPONENT R 0 Zo 10 20 1.0 50 2 5.0 4.0 3. 0 0.8 0.1 0.6 0.4 4 3 0.6 1 2 1: 1.8 GHz 2: 1.9 3: 1.97 4: 2.0 0. 8 Zin Zout 1 1: 1.8 GHz 2: 1.9 3: 1.97 4: 2.0 10 43 2 0. 4 NE NT 0.4 NE NT 3. 0 0.3 0.2 0.2 0. 4 0.3 4.0 5.0 0.2 0.1 20 NEL2035F03-24 Circuit Drawing 40 mm 40 mm ,,,,,,,, ,, , , , , ,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,, , , , , ,, , , , , , ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, , ,,,,, , , Thru hole 1 mm x 4 5 8 1 5 1 2 6 10.5 0.5 2.2 1 2.8 3.9 14.6 6 2 1 4.8 1 1 10 15 22 16 22 50 mm 5 5.8 2.3 1.8 2 2.5 2.5 1 0.3 1 1 4.5 8.8 1.5 2.8 9.5 8 0.5 0.5 1 1 1 1 6 6 10.5 25.5 2 15 input output 0.9 SUBSTRATE (TEFLON) DICLAD522T(R) THICKNESS = 0.79 mm DOUBLE SIDE 35 m Cu r = 2.60 3.3 2.3 3.1 2.1 3.3 7.6 4 6 8 0.1 7 NEL2035F03-24 Components Layout VBB R1 C2 R2 L1 This lead is placed near device flange - C4 VCC D1 C3 C1 C5 input R1 : 5.1 R2 : 30 L1 : 5 mm 10T C1, C2, C3, C5: MURATA 47 pF C4 : 22 F (50 V) Electrolytic Capacitor D1 : V06C output 8 NEL2035F03-24 APPLICATION = Amplifier Diagrams = 46 mW NEL2001 NEL2012 NEL2035 30 W 95 mW NEL2001 NEL2012 NEL2035 x 2 50 W NEL2035 x 4 40 mW NEL2004 NEL2012 NEL2035 100 W 9 NEL2035F03-24 [MEMO] 10 NEL2035F03-24 [MEMO] 11 NEL2035F03-24 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 |
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